The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2008

Filed:

May. 01, 2006
Applicants:

Michael Yu, Taichung, TW;

Chih-ping Chao, Hsin-Chu, TW;

Chih-sheng Chang, Hsinchu, TW;

Chun-hong Chen, Jhubei, TW;

Inventors:

Michael Yu, Taichung, TW;

Chih-Ping Chao, Hsin-Chu, TW;

Chih-Sheng Chang, Hsinchu, TW;

Chun-Hong Chen, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of decoupling the formation of LDD and pocket regions is provided. The method includes providing a semiconductor chip including active regions, forming gate structures in the active regions, forming N-LDD regions on the semiconductor chip using an N-LDD mask, forming N-Pocket regions on the semiconductor chip using an N-Pocket mask, forming P-LDD regions on the semiconductor chip using a P-LDD mask, and forming P-Pocket regions on the semiconductor chip using a P-Pocket mask.


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