The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Jun. 05, 2006
Martin Mollat, McKinney, TX (US);
Tathagata Chatterjee, Allen, TX (US);
Henry L. Edwards, Garland, TX (US);
Lance S. Robertson, Rockwall, TX (US);
Richard B. Irwin, Richardson, TX (US);
Binghua HU, Plano, TX (US);
Martin Mollat, McKinney, TX (US);
Tathagata Chatterjee, Allen, TX (US);
Henry L. Edwards, Garland, TX (US);
Lance S. Robertson, Rockwall, TX (US);
Richard B. Irwin, Richardson, TX (US);
Binghua Hu, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the doped well and configured to reduce threading dislocations.