The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Dec. 06, 2006
Jung Ryul Ahn, Seoul, KR;
Jum Soo Kim, Kyeongki-do, KR;
Jung Ryul Ahn, Seoul, KR;
Jum Soo Kim, Kyeongki-do, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A non-volatile memory device and a method of manufacturing the same, in which the program speed can be enhanced and the interference phenomenon can be reduced. The non-volatile memory device includes a semiconductor substrate having an active region defined by isolation layers arranged in one direction, a control gate arranged vertically to the direction in which the isolation layers are arranged, a floating gate formed on the active region below the control gate and having a lateral curve so that the floating gate has a width narrowed upwardly, a gate insulating layer formed between the floating gate and the semiconductor substrate, and a dielectric layer formed between the floating gate and the control gate.