The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Nov. 29, 2006
Hideaki Kurata, Kokubunji, JP;
Naoki Kobayashi, Tokyo, JP;
Shunichi Saeki, Ome, JP;
Takashi Kobayashi, Tokorozawa, JP;
Takayuki Kawahara, Higashiyamato, JP;
Yoshinori Takase, Tokyo, JP;
Keiichi Yoshida, Musashimurayama, JP;
Michitaro Kanamitsu, Ome, JP;
Shoji Kubono, Ome, JP;
Atsushi Nozoe, Hino, JP;
Hideaki Kurata, Kokubunji, JP;
Naoki Kobayashi, Tokyo, JP;
Shunichi Saeki, Ome, JP;
Takashi Kobayashi, Tokorozawa, JP;
Takayuki Kawahara, Higashiyamato, JP;
Yoshinori Takase, Tokyo, JP;
Keiichi Yoshida, Musashimurayama, JP;
Michitaro Kanamitsu, Ome, JP;
Shoji Kubono, Ome, JP;
Atsushi Nozoe, Hino, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.