The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Oct. 27, 2006
Applicant:
Wen-yueh Jang, Hsinchu, TW;
Inventor:
Wen-Yueh Jang, Hsinchu, TW;
Assignee:
Winbond Electronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention provides a reading method for a memory with multiple data states by applying a plurality of reading signals to an MIM element coupled to a memory cell. The logic level of the data stored in the memory cell is determined based on the number of the reading signals required to switch the state of the MIM element from a first state to a second state.
Jang, Wen-Yueh. (2008). Reading and writing method for non-volatile memory with multiple data states (U.S. Patent No. 7463524). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7463524
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile