The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Mar. 23, 2005
Naoyoshi Kawahara, Kanagawa, JP;
Hiroshi Murase, Kanagawa, JP;
Hiroaki Ohkubo, Kanagawa, JP;
Yasutaka Nakashiba, Kanagawa, JP;
Naoki Oda, Tokyo, JP;
Tokuhito Sasaki, Tokyo, JP;
Nobukazu Ito, Tokyo, JP;
Naoyoshi Kawahara, Kanagawa, JP;
Hiroshi Murase, Kanagawa, JP;
Hiroaki Ohkubo, Kanagawa, JP;
Yasutaka Nakashiba, Kanagawa, JP;
Naoki Oda, Tokyo, JP;
Tokuhito Sasaki, Tokyo, JP;
Nobukazu Ito, Tokyo, JP;
NEC Corporation, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, Kawasaki, JP;
Abstract
A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. Next, with the patterned silicon nitride film used as a mask, the silicon oxide film and the vanadium oxide film are etched to form a resistor film of vanadium oxide.