The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Aug. 22, 2005
Jiong Chen, San Jose, CA (US);
Nicholas R. White, Manchester, MA (US);
Jiong Chen, San Jose, CA (US);
Nicholas R. White, Manchester, MA (US);
Advanced ION Bean Technology Inc., San Jose, CA (US);
Abstract
This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.