The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Feb. 23, 2005
Applicants:
Chia Ming Lee, Yilan, TW;
Tsung Liang Cheng, Nantou, TW;
I Ling Chen, Yilan, TW;
Yu Chuan Liu, Taoyuan, TW;
Jen Inn Chyi, Taoyuan, TW;
Inventors:
Chia Ming Lee, Yilan, TW;
Tsung Liang Cheng, Nantou, TW;
I Ling Chen, Yilan, TW;
Yu Chuan Liu, Taoyuan, TW;
Jen Inn Chyi, Taoyuan, TW;
Assignee:
Tekcore Co., Ltd., Nantou, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlInGaN. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.