The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Sep. 07, 2006
Yasushi Oka, Tokyo, JP;
Kazuyoshi Shiba, Tokyo, JP;
Yasushi Oka, Tokyo, JP;
Kazuyoshi Shiba, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In a data program/erase device of a nonvolatile memory cell, data are re-written by means of an FN tunnel current of an entire channel surface. In a buried n-well of a semiconductor substrate in a flash memory formation region, p wells are placed in the form isolated from each other. In each of the p wells, a capacitor portion, a capacitor portion for programming/erasing data and an MIS•FET for reading data are placed. In the capacitor portion for programming/erasing data, rewriting (programming and erasing) of data is performed by means of an FN tunnel current of an entire channel surface.