The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Jun. 17, 2005
Hiromi Shimazu, Kashiwa, JP;
Tomio Iwasaki, Tsukuba, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Kensuke Ishikawa, Oume, JP;
Osamu Inoue, Kodaira, JP;
Takayuki Oshima, Oume, JP;
Hiromi Shimazu, Kashiwa, JP;
Tomio Iwasaki, Tsukuba, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Kensuke Ishikawa, Oume, JP;
Osamu Inoue, Kodaira, JP;
Takayuki Oshima, Oume, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing through the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.