The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2008

Filed:

Aug. 30, 2006
Applicants:

Ya-hong Xie, Beverly Hills, CA (US);

Tae-sik Yoon, Los Angeles, CA (US);

Inventors:

Ya-Hong Xie, Beverly Hills, CA (US);

Tae-Sik Yoon, Los Angeles, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

An article of manufacture includes a substrate, a relaxed buffer layer disposed on the substrate, and a plurality of isolation regions formed in the relaxed buffer layer. The isolation regions include threading dislocations while the remainder of the relaxed buffer layer is substantially free of threading dislocations. The relaxed buffer layer may be formed from silicon germanium while the substrate may be formed from silicon. A capping layer may be disposed over the relaxed buffer layer.


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Xie, Ya-Hong. (2008). Device containing isolation regions with threading dislocations (U.S. Patent No. 7459731). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7459731

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