The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Nov. 06, 2006
Tai-su Park, Seoul, KR;
Eui-joon Yoon, Seoul, KR;
U-in Chung, Seoul, KR;
Si-young Choi, Gyeonggi-do, KR;
Jong-ho Lee, Seoul, KR;
Tai-Su Park, Seoul, KR;
Eui-Joon Yoon, Seoul, KR;
U-In Chung, Seoul, KR;
Si-Young Choi, Gyeonggi-do, KR;
Jong-Ho Lee, Seoul, KR;
Samsung Electronic Co., Ltd., , KR;
Abstract
A method of forming a field effect transistor includes forming a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and forming an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The method may also include forming a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, forming a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and forming a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction.