The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Jan. 03, 2007
Applicants:
Kyoichi Suguro, Yokohama, JP;
Takeshi Shibata, Kwasaki, JP;
Kazuyoshi Sugihara, Miura-gun, JP;
Kouji Matsuo, Yokohama, JP;
Inventors:
Kyoichi Suguro, Yokohama, JP;
Takeshi Shibata, Kwasaki, JP;
Kazuyoshi Sugihara, Miura-gun, JP;
Kouji Matsuo, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.