The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Nov. 01, 2006
Shiro Yamazaki, Aichi-ken, JP;
Koji Hirata, Aichi-ken, JP;
Katsuhiro Imai, Nagoya, JP;
Makoto Iwai, Kasugai, JP;
Takatomo Sasaki, Minou, JP;
Yusuke Mori, Katano, JP;
Masashi Yoshimura, Takarazuka, JP;
Fumio Kawamura, Minou, JP;
Yuji Yamada, Atsugi, JP;
Shiro Yamazaki, Aichi-ken, JP;
Koji Hirata, Aichi-ken, JP;
Katsuhiro Imai, Nagoya, JP;
Makoto Iwai, Kasugai, JP;
Takatomo Sasaki, Minou, JP;
Yusuke Mori, Katano, JP;
Masashi Yoshimura, Takarazuka, JP;
Fumio Kawamura, Minou, JP;
Yuji Yamada, Atsugi, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
NGK Insulators, Ltd., Aichi-ken, JP;
Osaka University, Osaka-fu, JP;
Abstract
The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.