The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2008

Filed:

Oct. 16, 2006
Applicants:

Eli Lusky, Tel-Aviv, IL;

Boaz Eitan, Ra'anana, IL;

Guy Cohen, Yaad, IL;

Eduardo Maayan, Kfar Saba, IL;

Inventors:

Eli Lusky, Tel-Aviv, IL;

Boaz Eitan, Ra'anana, IL;

Guy Cohen, Yaad, IL;

Eduardo Maayan, Kfar Saba, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for reading a bit of a memory cell in a non-volatile memory (NVM) cell array, the method comprising providing a memory cell comprising a bit to be read and at least one other bit not to be read, and reading the bit to be read with respect to a multi-bit reference cell, the reference cell comprising a first bit at a first non-ground programmed state and a second bit at a second non-ground programmed state. Compared with the prior art, the present invention may enable achieving an improved sensing accuracy together with improved read disturb immunity.


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