The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Dec. 29, 2005
Woo-yeong Cho, Suwon-si, KR;
Du-eung Kim, Yongin-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Choong-keun Kwak, Suwon-si, KR;
Woo-yeong Cho, Suwon-si, KR;
Du-eung Kim, Yongin-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Choong-keun Kwak, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A phase change memory device of one aspect includes a memory array including a plurality of phase change memory cells, a write boosting circuit, and a write driver. The write boosting circuit boosts a first voltage and outputs a first control voltage in response to a control signal in a first operation mode, and boosts the first voltage and outputs a second control voltage in response to the control signal in a second operation mode and a third operation mode. The write driver is driven by the first control voltage in the first operation mode and writes data to a selected memory cell of the memory array.