The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Nov. 21, 2002
Applicants:
Chongying Xu, New Milford, CT (US);
Alexander S. Borovik, Hartford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Inventors:
Chongying Xu, New Milford, CT (US);
Alexander S. Borovik, Hartford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Assignee:
Advanced Technology Materials, Inc., Danbury, CT (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 31/0256 (2006.01);
U.S. Cl.
CPC ...
Abstract
A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.