The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2008

Filed:

Oct. 11, 2005
Applicants:

Seshasayee Varadarajan, Lake Oswego, OR (US);

Jian Zhou, West Linn, OR (US);

Inventors:

Seshasayee Varadarajan, Lake Oswego, OR (US);

Jian Zhou, West Linn, OR (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a procedure for bottom-up fill of electroless copper film in sub-micron integrated circuit features. By repeatedly placing an integrated circuit wafer in an electroless bath, a transient period of time of accelerated growth in the feature is repeated to achieve many small layers of deposition, each of which is thicker near the base of the feature. The net result is filing of the feature from the bottom-up fill without formation of voids. The electroless bath employed to form the continuous electroless copper film may include a reducing agent, a complexing agent, a source of copper ions, a pH adjuster, and optionally one or more surfactants and/or stabilizers.


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