The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Jan. 06, 2006
Tsutomu Ida, Komoro, JP;
Yoshihiko Kobayashi, Tateshina, JP;
Masakazu Hashizume, Tateshina, JP;
Yoshinori Shiokawa, Komoro, JP;
Sakae Kikuchi, Yachiho, JP;
Tsutomu Ida, Komoro, JP;
Yoshihiko Kobayashi, Tateshina, JP;
Masakazu Hashizume, Tateshina, JP;
Yoshinori Shiokawa, Komoro, JP;
Sakae Kikuchi, Yachiho, JP;
Renesas Technology Corp., Tokyo, JP;
Renesas Eastern Semiconductor, Inc., Tokyo, JP;
Abstract
The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.