The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Jun. 30, 2004
Wen-chin Lee, Hsin-Chu, TW;
Chung-hu GE, Taipei, TW;
Chenming HU, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A preferred embodiment of the present invention comprises a dielectric/metal/2energy bandgap (E) semiconductor/1Esubstrate structure. In order to reduce the contact resistance, a semiconductor with a lower energy bandgap (2E) is put in contact with metal. The energy bandgap of the 2Esemiconductor is lower than the energy bandgap of the 1Esemiconductor and preferably lower than 1.1eV. In addition, a layer of dielectric may be deposited on the metal. The dielectric layer has built-in stress to compensate for the stress in the metal, 2Esemiconductor and 1Esubstrate. A process of making the structure is also disclosed.