The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Apr. 07, 2005
Young-gu Jin, Hwaseong-si, KR;
Sung-hoon Lee, Yongin-si, KR;
Hyo-sug Lee, Suwon-si, KR;
Byoung-lyong Choi, Seoul, KR;
Jong-seob Kim, Suwon-si, KR;
Young-gu Jin, Hwaseong-si, KR;
Sung-hoon Lee, Yongin-si, KR;
Hyo-sug Lee, Suwon-si, KR;
Byoung-lyong Choi, Seoul, KR;
Jong-seob Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.