The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Apr. 12, 2006
Hong-yi Liao, Siluo Township, Yulin County, TW;
Wu-chang Chang, Beipu Township, Hsinchu County, TW;
Ching-yuan Lin, Jhudong Township, Hsinchu County, TW;
Hong-Yi Liao, Siluo Township, Yulin County, TW;
Wu-Chang Chang, Beipu Township, Hsinchu County, TW;
Ching-Yuan Lin, Jhudong Township, Hsinchu County, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
An operating method of a non-volatile memory is provided. The non-volatile memory includes plural memory cells. Each memory cell includes a charge storage structure, a gate, and a source and a drain disposed in the well on the both sides of the gate. During an erasing operation, a first voltage is applied to the source of the selected memory cell, a second voltage is applied to the gate of each selected memory cell, and a third voltage is applied to the well; and the drain of the selected memory cell is floated, so that the selected memory cell is erased. In the meantime, the fourth voltage is applied to the drain of each unselected memory cell, the fifth voltage is applied to the gate of the unselected memory cell, and the source of the unselected memory cell is floated to prevent the unselected memory cell from being erased.