The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Jan. 30, 2006
Satoshi Inaba, Yokohama, JP;
Tetsu Morooka, Yokohama, JP;
Satoshi Inaba, Yokohama, JP;
Tetsu Morooka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate, a channel region formed above the semiconductor substrate, a first gate electrode formed above the channel region via a first gate insulating film, a second gate electrode formed below the channel region via a second gate insulating film to face the first gate electrode, a first insulating film covering side surfaces of the second gate electrode, a second insulating film covering a bottom surface of the second gate electrode, and a semiconductor layer which has an upper surface positioned above an upper surface of the first gate insulating film and side surfaces facing side surfaces of the first gate electrode, and in which a source region and drain region are formed. The side surfaces of the second gate electrode are aligned with or positioned inside the side surfaces of the semiconductor layer.