The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Sep. 14, 2007
Kwang-sub Yoon, Yongin-si, KR;
Jung-hyeon Lee, Yongin-si, KR;
Bong-cheol Kim, Seoul, KR;
Se-young Park, Incheon, KR;
Kwang-Sub Yoon, Yongin-si, KR;
Jung-Hyeon Lee, Yongin-si, KR;
Bong-Cheol Kim, Seoul, KR;
Se-Young Park, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided with an ozone gas so as to change the property of the upper portion of the insulating layer. The upper portion of the insulating layer may be chemically removed to expose the upper portion of the conductive layer. The exposed upper portion of the conductive layer may be removed so as to transform the conductive layer into a lower electrode. The remaining portion of the insulating layer may be removed, and an upper electrode may be formed on the lower electrode.