The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Nov. 14, 2005
Hirosato Ochimizu, Kawasaki, JP;
Yasuyoshi Mishima, Kawasaki, JP;
Hirosato Ochimizu, Kawasaki, JP;
Yasuyoshi Mishima, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
On an insulation layerformed on a silicon substrate, there are formed in an NMOS transistor regionan NMOS transistorcomprising a silicon layer, a lattice-relaxed silicon germanium layerformed on the silicon layer, a tensile-strained silicon layerformed on the silicon germanium layerand a gate electrodeformed on the silicon layerwith a gate insulation filmformed therebetween and in a PMOS transistor regiona PMOS transistorcomprising a silicon layer, a compression-strained silicon germanium layer formed on the silicon layerand a gate electrodeformed on the silicon germanium layerwith a gate insulation filmformed therebetween.