The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Jan. 23, 2006
Applicants:
Dong-seok Suh, Seoul, KR;
Yeon-ho Khang, Yongin-si, KR;
Vassill Leniachine, Suwon-si, KR;
Mi-jeong Song, Suwon-si, KR;
Sergey Antonov, Petersburg, RU;
Inventors:
Dong-Seok Suh, Seoul, KR;
Yeon-Ho Khang, Yongin-si, KR;
Vassill Leniachine, Suwon-si, KR;
Mi-Jeong Song, Suwon-si, KR;
Sergey Antonov, Petersburg, RU;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.