The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Sep. 12, 2006
Fook-luen Heng, Yorktown Heights, NY (US);
Mark Alan Lavin, Katonah, NY (US);
Jin-fuw Lee, Yorktown Heights, NY (US);
Chieh-yu Lin, Hopewell Junction, NY (US);
Jawahar Pundalik Nayak, Newburgh, NY (US);
Rama Nand Singh, Bethel, CT (US);
Fook-Luen Heng, Yorktown Heights, NY (US);
Mark Alan Lavin, Katonah, NY (US);
Jin-Fuw Lee, Yorktown Heights, NY (US);
Chieh-yu Lin, Hopewell Junction, NY (US);
Jawahar Pundalik Nayak, Newburgh, NY (US);
Rama Nand Singh, Bethel, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A system and method of employing patterning process statistics to evaluate layouts for intersect area analysis includes applying Optical Proximity Correction (OPC) to the layout, simulating images formed by the mask and applying patterning process variation distributions to influence and determine corrective actions taken to improve and optimize the rules for compliance by the layout. The process variation distributions are mapped to an intersect area distribution by creating a histogram based upon a plurality of processes for an intersect area. The intersect area is analyzed using the histogram to provide ground rule waivers and optimization.