The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Dec. 15, 2006
Applicants:
Jaume Abella, Barcelona, ES;
Xavier Vera, Barcelona, ES;
Osman Unsal, Barcelona, ES;
Antonio Gonzalez, Barcelona, ES;
Inventors:
Jaume Abella, Barcelona, ES;
Xavier Vera, Barcelona, ES;
Osman Unsal, Barcelona, ES;
Antonio Gonzalez, Barcelona, ES;
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An NBTI-resilient memory cell is made up of a ring of multiple NAND gates. The NAND gates are arranged such that one of the NAND gates has a '0' in its output, while the remaining NAND gates have a '1' in their outputs. PMOS transistors within the memory cell experience less degradation than in inverter-based memory cells. Guard-banding to account for transistor degradation may be mitigated, or the operating frequency of the memory cell may be increased.