The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Dec. 17, 2004
Kunliang Zhang, Milpitas, CA (US);
Mao-min Chen, San Jose, CA (US);
Chyu-jiuh Torng, Pleasanton, CA (US);
Min LI, Dublin, CA (US);
Chen-jung Chien, Sunnyvale, CA (US);
Kunliang Zhang, Milpitas, CA (US);
Mao-Min Chen, San Jose, CA (US);
Chyu-Jiuh Torng, Pleasanton, CA (US);
Min Li, Dublin, CA (US);
Chen-Jung Chien, Sunnyvale, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of CoCrPtor CoCrPtthat are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total H, Mt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW (normalized base line wandering) reject rates during a read operation are achieved.