The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Sep. 26, 2006
Victor Higgs, Hertfordshire, GB;
Ian Mayes, Bedfordshire, GB;
Freddie Yun Heng Chin, Hemel Hempstead, GB;
Michael Sweeney, Hemel Hempstead, GB;
Victor Higgs, Hertfordshire, GB;
Ian Mayes, Bedfordshire, GB;
Freddie Yun Heng Chin, Hemel Hempstead, GB;
Michael Sweeney, Hemel Hempstead, GB;
Nanometrics Incorporated, Milpitas, CA (US);
Abstract
The invention relates to a method and apparatus for detecting defects in a semiconductor or silicon structure at room temperature, and in an efficient time, using photoluminescence. The invention employs the use of a high intensity beam of light preferably having a spot size between 0.1 mm 0.5 microns and a peak or average power density of 10-10w/cmwith a view to generating a high concentration of charge carriers, which charge characters detect defects in a semiconductor by interacting with same. These defects are visible by producing a photoluminescence image of the semiconductor. Several wavelengths may be selected to identify defects at a selective depth as well as confocal optics may be used.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile