The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7446859 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 04, 2008

Filed:

Jan. 27, 2006
Applicants:

Dmitriy Shneyder, Hopewell Junction, NY (US);

Raschid J. Bezama, Putnam Valley, NY (US);

Dario L. Goldfarb, Mohegan Lake, NY (US);

Kafai Lai, Poughkeepsie, NY (US);

Inventors:

Dmitriy Shneyder, Hopewell Junction, NY (US);

Raschid J. Bezama, Putnam Valley, NY (US);

Dario L. Goldfarb, Mohegan Lake, NY (US);

Kafai Lai, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03B 27/58 (2006.01); G03B 27/62 (2006.01); G03B 27/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly having a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. The wafer chuck has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.


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