The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Oct. 19, 2006
Kenneth H. Smith, Chandler, AZ (US);
Brian R. Butcher, Queen Creek, AZ (US);
Gregory W. Grynkewich, Gilbert, AZ (US);
Srinivas V. Pietambaram, Chandler, AZ (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Kenneth H. Smith, Chandler, AZ (US);
Brian R. Butcher, Queen Creek, AZ (US);
Gregory W. Grynkewich, Gilbert, AZ (US);
Srinivas V. Pietambaram, Chandler, AZ (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Everspin Technologies, Inc., Chandler, AZ (US);
Abstract
Methods and apparatus are provided for magnetoresistive memories employing magnetic tunnel junction (MTJ). The apparatus comprises a MTJ (), first () and second () electrodes coupled, respectively, to first () and second () magnetic layers of the MTJ (), first () and second () write conductors magnetically coupled to the MTJ () and spaced apart from the first () and second () electrodes, and at least one etch-stop layer () located between the first write conductor () and the first electrode (), having an etch rate in a reagent for etching the MTJ () and/or the first electrode () that is at most% of the etch rate of the MTJ () and/or first conductor () to the same reagent, so as to allow portions of the MTJ () and first electrode () to be removed without affecting the underlying first write conductor (). In a further embodiment, a second etch-stop layer () is located between the second electrode () and the second write conductor (). Improved yield and performance are obtained.