The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2008

Filed:

Oct. 04, 2005
Applicants:

Jin-wook Lee, Seoul, KR;

Pyung-moon Zhang, Yongin-si, KR;

Inventors:

Jin-Wook Lee, Seoul, KR;

Pyung-Moon Zhang, Yongin-si, KR;

Assignee:

Samsung Electronic Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/10 (2006.01); G11C 16/06 (2006.01); G11C 7/02 (2006.01); G11C 8/12 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a NAND flash memory device comprising a memory cell array connected to a page buffer via a plurality of bitlines. The page buffer stores input data to be programmed in the memory cell array. The memory cell array is programmed by establishing bitline voltages for the plurality of bitlines according to the input data and then applying a wordline voltage to the memory cell array. The bitline voltages are established by first precharging the bitlines to a power supply voltage and then selectively discharging the bitlines according to the input data. The bitlines are discharged sequentially, i.e., some of the bitlines are discharged before others.


Find Patent Forward Citations

Loading…