The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Jan. 13, 2006
Stephan Schröder, München, DE;
Herbert Benzinger, München, DE;
Georg Erhard Eggers, München, DE;
Manfred Pröll, Dorfen, DE;
Jörg Kliewer, München, DE;
Stephan Schröder, München, DE;
Herbert Benzinger, München, DE;
Georg Erhard Eggers, München, DE;
Manfred Pröll, Dorfen, DE;
Jörg Kliewer, München, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
An integrated semiconductor memory device includes at least one memory cell, at least one sense amplifier and a pair of bit lines connected to each sense amplifier, where each memory cell includes a selection transistor and a storage capacitor. The storage capacitor of each memory cell includes a first capacitor electrode and a second capacitor electrode, and the selection transistor of each memory cell includes a first source/drain region that is connected by a first contact connection to one bit line of a pair of bit lines corresponding with the memory cell, and a second source/drain region that is conductively connected to the first capacitor electrode of the storage capacitor of the memory cell. The second capacitor electrode of the storage capacitor of each memory cell is connected to the other bit line of the pair of bit lines corresponding with the memory cell.