The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
May. 18, 2005
Applicants:
Shinichi Tomita, Tokyo, JP;
Masahide Tsutsumi, Tokyo, JP;
Inventors:
Shinichi Tomita, Tokyo, JP;
Masahide Tsutsumi, Tokyo, JP;
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract
This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.