The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Dec. 29, 2005
Applicant:
Chang Eun Lee, Seoul, KR;
Inventor:
Chang Eun Lee, Seoul, KR;
Assignee:
Dongbu Electronics, Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CMOS image sensor and a method for fabricating the same prevent a lifting effect of microlenses. Also, a diffused reflection of microlenses is prevented. The CMOS image sensor includes photodiodes, an interlayer insulating layer, metal lines formed in the interlayer insulating layer to electrically connect the respective photodiodes with each other, an oxide layer, a passivation layer to protect the CMOS image sensor from external sources, and microlenses formed to pass through the passivation layer at portions corresponding to the photodiodes.