The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Jun. 10, 2005
Kwang-ok Kim, Ichon-shi, KR;
Yun-seok Cho, Ichon-shi, KR;
Seung-chan Moon, Ichon-shi, KR;
Jin-ki Jung, Ichon-shi, KR;
Sung-kwon Lee, Ichon-shi, KR;
Jun-hyeub Sun, Ichon-shi, KR;
Dong-duk Lee, Ichon-shi, KR;
Jin-woong Kim, Ichon-shi, KR;
Gyu-han Yoon, Ichon-shi, KR;
Kwang-Ok Kim, Ichon-shi, KR;
Yun-Seok Cho, Ichon-shi, KR;
Seung-Chan Moon, Ichon-shi, KR;
Jin-Ki Jung, Ichon-shi, KR;
Sung-Kwon Lee, Ichon-shi, KR;
Jun-Hyeub Sun, Ichon-shi, KR;
Dong-Duk Lee, Ichon-shi, KR;
Jin-Woong Kim, Ichon-shi, KR;
Gyu-Han Yoon, Ichon-shi, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHFgas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.