The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Aug. 15, 2005
Jiannong Su, Shanghai, CN;
Simon Shi-ning Yang, Portland, OR (US);
Jian Zhang, Arcadia, CA (US);
Chartered Semiconductor Manufacturing, Ltd, Singapore, SG;
Abstract
A method for processing IC designs for different metal BEOL processes is provided for enabling fabricating using a metal fabrication process an IC originally having a backend design for a different metal fabrication process. The method first determines layer constructions of an original design of an IC for a first metal backend process, and, based on the layer constructions of the original design of the IC, constructs primitive layer constructions of a target design of the IC for a second metal backend process. The method then tunes an effective dielectric constant of a dielectric layer of the target design to match an associated capacitance of the target backend design with a corresponding capacitance of the original backend design. The method can be used to convert a backend design of an IC from an old metal process (such as Al process) to a new metal process (such as Cu process), without redesigning the IC for the new metal BEOL fabrication process.