The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Jun. 09, 2005
Paul A. Grudowski, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
Yongloo Jeon, Austin, TX (US);
Chad E. Weintraub, Austin, TX (US);
Paul A. Grudowski, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
Yongloo Jeon, Austin, TX (US);
Chad E. Weintraub, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for forming a semiconductor device comprises providing a semiconductor substrate; forming a first stressor layer over a surface of the semiconductor substrate; selectively removing portions of the first stressor layer; forming a second stressor layer over the surface of the semiconductor substrate and the first stressor layer; and selectively removing portions of the second stressor layer using an isotropic etch. In one embodiment, the isotropic etch is a wet etch that selectively removes the second stressor layer without removing a significant amount of the first stressor layer and also planarizing a boundary between the first stressor layer and the second stressor layer.