The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2008

Filed:

Aug. 22, 2005
Applicants:

Ju-hsin Chi, Taichung County, TW;

Kun-jung Wu, Taoyuan County, TW;

Pin-yuan Yu, Hsinchu, TW;

Yu-chi Lin, Taipei, TW;

Yung-chih Lin, Hsinchu, TW;

Inventors:

Ju-Hsin Chi, Taichung County, TW;

Kun-Jung Wu, Taoyuan County, TW;

Pin-Yuan Yu, Hsinchu, TW;

Yu-Chi Lin, Taipei, TW;

Yung-Chih Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of piping defect detection is provided. A semiconductor substrate having an active region and an isolation region is provided, a plurality of semiconductor elements are formed on the semiconductor substrate, a dielectric layer is deposited on the semiconductor substrate and the semiconductor elements, and first and second contact plugs are formed in the dielectric layer to connect the active region and the isolation region respectively. The first contact plug and the second contact plug are illuminated by an electron beam, accumulating charge on the second contact plug, and piping defects are detected between the first contact plug and the second contact plug according to brightness contrast between the first contact plug and the second contact plug.


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