The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Dec. 06, 2006
Chian Q. Liu, Bolingbrook, IL (US);
Raymond P. Conley, DeKalb, IL (US);
Albert T. Macrander, Naperville, IL (US);
Hyon Chol Kang, Chonan Chungchongnam-Do, KR;
G. Brian Stephenson, Lisle, IL (US);
Jorg Maser, Oak Park, IL (US);
Chian Q. Liu, Bolingbrook, IL (US);
Raymond P. Conley, DeKalb, IL (US);
Albert T. Macrander, Naperville, IL (US);
Hyon Chol Kang, Chonan Chungchongnam-Do, KR;
G. Brian Stephenson, Lisle, IL (US);
Jorg Maser, Oak Park, IL (US);
UChicago Argonne, LLC, Chicago, IL (US);
Abstract
A zone plate multilayer structure includes a substrate carrying a plurality of alternating layers respectively formed of tungsten silicide (WSi) and silicon (Si). The alternating layers are sequentially deposited precisely controlling a thickness of each layer from a minimum thickness of a first deposited layer adjacent the substrate to a maximum thickness of a last deposited layer. The first minimum thickness layer has a selected thickness of less than or equal to 5 nm with the thickness of the alternating layers monotonically increasing to provide a zone plate multilayer structure having a thickness of greater than 12 μm (microns). The x-rays are diffracted in Laue transmission geometry by the specific arrangement of silicon and tungsten silicide.