The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2008

Filed:

Mar. 14, 2005
Applicants:

Xiang Gao, Edison, NJ (US);

Alex Ceruzzi, Princeton Junction, NJ (US);

Steve Schwed, Bridgewater, NJ (US);

Linlin Liu, Hillsborough, NJ (US);

Mark Gottfried, Hillsborough, NJ (US);

Inventors:

Xiang Gao, Edison, NJ (US);

Alex Ceruzzi, Princeton Junction, NJ (US);

Steve Schwed, Bridgewater, NJ (US);

Linlin Liu, Hillsborough, NJ (US);

Mark Gottfried, Hillsborough, NJ (US);

Assignee:

Emcore Corporation, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.


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