The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Mar. 22, 2007
Wen Shi, Shanghai, CN;
Wei Wei Ruan, Shanghai, CN;
Wen Shi, Shanghai, CN;
Wei Wei Ruan, Shanghai, CN;
Abstract
A test structure in accordance with the present invention allows for testing of both VTDDB, and leakage current between adjacent gate features. The test structure comprises a plurality of parallel polysilicon gate structures overlying a substrate. Traces placing alternate gates in electrical communication with a polysilicon edge are connected by a fuse. In one embodiment, a potential difference is applied across all gates to trigger V, and then the fuse is broken to allow individual probing of breakdown of the alternate groups of gates. In another embodiment, the fuse is broken and then force and sense voltages are applied to the edge polysilicon in communication with the alternate gate groupings, allowing detection of leakage current between the alternate groupings of gates that reveals the existence of an unwanted polysilicon extrusion or bridge.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile