The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2008

Filed:

Oct. 12, 2004
Applicants:

Christian Boit, Berlin, DE;

Theodore R. Lundquist, Milpitas, CA (US);

Chun-cheng Tsao, Cupertino, CA (US);

Uwe Jürgen Kerst, Berlin, DE;

Stephan Schoemann, Freising, DE;

Peter Sadewater, Berlin, DE;

Inventors:

Christian Boit, Berlin, DE;

Theodore R. Lundquist, Milpitas, CA (US);

Chun-Cheng Tsao, Cupertino, CA (US);

Uwe Jürgen Kerst, Berlin, DE;

Stephan Schoemann, Freising, DE;

Peter Sadewater, Berlin, DE;

Assignee:

DCG Systems, Inc, Fremont, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract

Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.


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