The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
May. 19, 2006
Kangguo Cheng, Beacon, NY (US);
Woo-hyeong Lee, Poughquag, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Kangguo Cheng, Beacon, NY (US);
Woo-Hyeong Lee, Poughquag, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A strained HOT MOSFET fabrication method. The MOSFET fabrication method includes providing a semiconductor structure which includes (a) a first semiconductor layer having a first crystallographic orientation, (b) a buried insulating layer on top of the first semiconductor layer, (c) a second semiconductor layer on top of the buried oxide layer. The second semiconductor layer has a second crystallographic orientation different from the first crystallographic orientation. The method further includes forming a third semiconductor layer on top of the first semiconductor layer which has the first crystallographic orientation. The method further includes forming a fourth semiconductor layer on top of the third semiconductor layer. The fourth semiconductor layer (a) comprises a different material than that of the third semiconductor layer, and (b) has the first crystallographic orientation.