The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2008

Filed:

Sep. 16, 2005
Applicant:

Richard Beaudry, Quebec, CA;

Inventor:

Richard Beaudry, Quebec, CA;

Assignee:

DALSA Semiconductor Inc., Waterloo, ON, CA;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making an etch structure in a substrate involves the steps of providing a mask on a substrate with a pattern that leaves at least one opening leaving the substrate in direct contact with the ambient, performing an isotropic or quasi-isotropic etch through a mask to create a cavity under the mask, which mask is left behind as a suspended membrane above the cavity; and performing a subsequent anisotropic etch that etches anisotropically the pattern of the mask in the bottom of the cavity.


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