The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Dec. 27, 2006
Hiroaki Tanizaki, Itami, JP;
Takaharu Tsuji, Tokyo, JP;
Yasumitsu Murai, Itami, JP;
Hideto Hidaka, Tokyo, JP;
Hiroaki Tanizaki, Itami, JP;
Takaharu Tsuji, Tokyo, JP;
Yasumitsu Murai, Itami, JP;
Hideto Hidaka, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Source lines for a spin injection magnetic memory cell are arranged parallel to word lines for executing writing/reading of data multiple bits at a time. In a write operation, a source line potential changes in a predetermined sequence such that the source line commonly connected to a plurality of selected memory cells is set to pass a current only in one direction in each stage of the operation sequence. For the data write sequence, a current is caused to flow through memory cells according to write data sequentially, or the memory cell has a resistance state set to an initial resistance state before writing, and then changed to a state according to the write data Fast writing can be achieved in the magnetic memory without increasing a memory cell layout area.