The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Nov. 10, 2005
Ching-wei Chen, Hsin-Chu Hsien, TW;
Chih-cheng Hsieh, Hsin-Chu Hsien, TW;
Chien-chang Huang, Hsin-Chu Hsien, TW;
Ching-Wei Chen, Hsin-Chu Hsien, TW;
Chih-Cheng Hsieh, Hsin-Chu Hsien, TW;
Chien-Chang Huang, Hsin-Chu Hsien, TW;
PixArt Imaging Inc., Hsin-Chu Hsien, TW;
Abstract
A CMOS image sensor includes a semiconductor substrate; a pinned photodiode formed in a light-sensing region of the semiconductor substrate, the pinned photodiode comprising a charge-accumulating diffusion region and a surface pinning diffusion region overlying the charge-accumulating diffusion region; a transfer transistor, wherein the transfer transistor has a transfer gate comprising a protruding first gate segment with a first gate dimension and a second gate segment with a second gate dimension that is smaller than the first gate dimension. A first overlapping portion between the protruding first gate segment and the charge-accumulating diffusion region is greater than a second overlapping portion between the second gate segment and the charge-accumulating diffusion region.