The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2008

Filed:

Jul. 23, 2006
Applicants:

Cheng-hsun Nien, Taipei, TW;

Chuen-horng Tsai, Hsinchu, TW;

Kun-ying Shin, Hsinchu, TW;

Wen-bin Jian, Hsinchu, TW;

Inventors:

Cheng-Hsun Nien, Taipei, TW;

Chuen-Horng Tsai, Hsinchu, TW;

Kun-Ying Shin, Hsinchu, TW;

Wen-Bin Jian, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/26 (2006.01); H01J 37/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine 'when' and 'where' the probe starts to contact the sample surface inside an electron microscope.


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