The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Jan. 11, 2006
Woo-gwan Shim, Gyeonggi-do, KR;
Jung-min OH, Incheon Metropolitan, KR;
Chang-ki Hong, Gyeonggi-do, KR;
Sang-jun Choi, Seoul, KR;
Sang-yong Kim, Gyeonggi-do, KR;
Woo-Gwan Shim, Gyeonggi-do, KR;
Jung-Min Oh, Incheon Metropolitan, KR;
Chang-Ki Hong, Gyeonggi-do, KR;
Sang-Jun Choi, Seoul, KR;
Sang-Yong Kim, Gyeonggi-do, KR;
Abstract
Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold oxide layer and the bridge insulating layer are etched to define an electrode region. The mold oxide layer is removed using an etching gas having an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.